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  • First, you have to register at this site:
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    Then you obtain the login and the password.

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    (password protected)

  • Please contact support [at] nextnano.de for more information.

Features
next generation 3D nano device simulator

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nextnano³ is a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fully quantum mechanically, whereas the current is determined by employing a semiclassical concept of local Fermi levels that are calculated self-consistently.

Simulating quantum dots, quantum wires, RTDs, MOSFETs, HEMTs, etc.

  • includes group IV materials (Si, Ge, SiGe), all III-V and II-VI materials and its ternaries as well as lattice-matched quaternaries; the nitrides and the II-VI materials are available in the zincblende and wurtzite crystal structure
  • flexible structures and geometries (1D, 2D and 3D)
  • fully quantum mechanically, based on the 8-band k.p model within a finite differences grid
  • includes strain, piezo and pyroelectric charges
  • growth directions along [001], [011], [111], [211], ... in short along any crystallographic direction
  • equilibrium and non-equilibrium, calculation of current close to equilibrium (semi-classical), ballistic transport
  • magnetic field
  • optical absorption
  • BIO-nextnano³
    Semiconductors connected to an electrolyte solution (Poisson-Boltzmann equation)

Software
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